Eliade Stefanescu - Superradiant dissipative tunneling in a double p-i-n semiconductor heterostructure with thermal injection of electrons

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      Publication Details (including relevant citation   information):

      Physica        A 374 (2007)   2003.


      We propose a semiconductor device with   two p-i-n   junctions maintained at two different temperatures. When   the   current injected in the device due to this   temperature difference exceeds a   threshold value, a   superradiant field is created in the first gate that     induces an additional current in the second gate. The injection   current is   amplified by this reaction loop. In this   way, the heat flow between the two   junctions is   partially transformed into superradiant power.

      Address (URL): http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TVG-4KJ73VC-7&_user=1 0&_coverDate=01%2F15%2F2007&_rdoc=21&_fmt=high&_orig=browse&_origin=browse&_zone =rslt_list_item&_srch=doc-info(%23toc%235534%232007%23996259998%23637905%23FLA%2 3display%23Volume)&_cdi=5534&_sort=d&_docanchor=&_ct=50&_acct=C000050221&_versio n=1&_urlVersion=0&_userid=10&md5=0c645339d1faffd3fc5af8812d0330ce&searchtype=a