Idriss Blakey - Polycarbonate Based Non-chemically Amplified Photoresists for Extreme Ultraviolet Lithography.

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  Publication Details (including relevant citation   information):

  Blakey, I.; Yu, A.; Blinco, J.; Jack, K. S.; Liu, H.; Leeson, M.;   Yeuh, W.; Younkin, T.; Whittaker, A. K., Proc. SPIE 2010, 7636,   763635

  DOI: 10.1117/12.853620


  Some initial EUVL patterning results for polycarbonate based   non-chemically amplified resists are presented. Without full   optimization the developer a resolution of 60 nm line spaces   could be obtained. With slight overexposure (1.4 × E0)   43.5 nm lines at a half pitch of 50 nm could be printed. At 2x   E0 a 28.6 nm lines at a half pitch of 50 nm could be   obtained with a LER that was just above expected for mask   roughness. Upon being irradiated with EUV photons, these polymers   undergo chain scission with the loss of carbon dioxide and carbon   monoxide. The remaining photoproducts appear to be non-volatile   under standard EUV irradiation conditions, but do exhibit   increased solubility in developer compared to the unirradiated   polymer. The sensitivity of the polymers to EUV light is related   to their oxygen content and ways to increase the sensitivity of   the polymers to 10 mJ cm-2 is discussed.

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