Idriss Blakey - Polysulfone based non-CA resists for 193 nm immersion lithography: Effect of increasing polymer absorbance on sensitivity.

Version 1

      Publication Details (including relevant citation   information):

      Chen, L.; Goh, Y.-K.; Lawrie, K.; Chuang, Y.; Piscani, E.;   Zimmerman, P.; Blakey, I.; Whittaker, A. K.,  Radiat. Phys.   Chem. 2011, 80 (2), 242-247.

      doi:10.1016/j.radphyschem.2010.07.040

      Abstract:

      The use of norbornene-based polysulfones as non-chemically   amplified  resists (non-CARs) for 193 nm immersion   lithography was explored.  Allylbenzene was incorporated   into the polymer backbone to increase the  absorbance of the   polymers. The effect of polymer absorbance on  sensitivity   to 193 nm radiation was investigated. Polymer films on    silicon wafers have been irradiated with 193 nm photons in the   absence  of a photo-acid generator. Chemical contrast curves   (film thickness  versus dose plots prior to solvent   development) and contrast curves  (film thickness versus   dose plots after solvent development) were  obtained by   spectroscopic ellipsometry. The results show that   E0 values could be reduced significantly by   increasing the absorbance of the polymer.

      Address (URL): http://dx.doi.org/10.1016/j.radphyschem.2010.07.040