Publication Details (including relevant citation information):
Chen, L.; Goh, Y.-K.; Lawrie, K.; Chuang, Y.; Piscani, E.; Zimmerman, P.; Blakey, I.; Whittaker, A. K., Radiat. Phys. Chem. 2011, 80 (2), 242-247.
The use of norbornene-based polysulfones as non-chemically amplified resists (non-CARs) for 193 nm immersion lithography was explored. Allylbenzene was incorporated into the polymer backbone to increase the absorbance of the polymers. The effect of polymer absorbance on sensitivity to 193 nm radiation was investigated. Polymer films on silicon wafers have been irradiated with 193 nm photons in the absence of a photo-acid generator. Chemical contrast curves (film thickness versus dose plots prior to solvent development) and contrast curves (film thickness versus dose plots after solvent development) were obtained by spectroscopic ellipsometry. The results show that E0 values could be reduced significantly by increasing the absorbance of the polymer.
Address (URL): http://dx.doi.org/10.1016/j.radphyschem.2010.07.040