Idriss Blakey - Non-chemically amplified resists for 193-nm immersion lithography: influence of absorbance on performance.

Version 1

      Publication Details (including relevant citation   information):

      Chen, L.; Goh, Y.-K.; Lawrie, K.; Smith, B.; Montgomery, W.;   Zimmerman, P.; Blakey, I.; Whittaker, A.,  Proc. SPIE 2010,   7639, 763953/763901-763953/763909.

      DOI: 10.1117/12.846971

      Abstract:

      The feasibility of three polymer systems for use as non   chemically  amplified resists for 193 nm lithography are   discussed. The three systems are polycarbonates,   polyphthalaldehydes and  polysulfones. In general it was   found that increased absorbance resulted in higher sensitivity to   193 nm light.  However, the exception to this was the   polycarbonates, which were found to undergo crosslinking due to   an  alkene group present in the polymer backbone. Although   polyphthalaldehydes were very sensitive, their absorbance    values were too high to be useful in a commercial environment.   Absorbing polysulfones were found to be sensitive to 193 nm    light and initial patterning results have been presented.

      Address (URL): http://spie.org/x648.html?product_id=846971