Publication Details (including relevant citation information):
Chen, L.; Goh, Y.-K.; Lawrie, K.; Smith, B.; Montgomery, W.; Zimmerman, P.; Blakey, I.; Whittaker, A., Proc. SPIE 2010, 7639, 763953/763901-763953/763909.
The feasibility of three polymer systems for use as non chemically amplified resists for 193 nm lithography are discussed. The three systems are polycarbonates, polyphthalaldehydes and polysulfones. In general it was found that increased absorbance resulted in higher sensitivity to 193 nm light. However, the exception to this was the polycarbonates, which were found to undergo crosslinking due to an alkene group present in the polymer backbone. Although polyphthalaldehydes were very sensitive, their absorbance values were too high to be useful in a commercial environment. Absorbing polysulfones were found to be sensitive to 193 nm light and initial patterning results have been presented.
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