Idriss Blakey - Non-CA resists for 193 nm immersion lithography: effects of chemical structure on sensitivity.

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  Publication Details (including relevant citation   information):

  Blakey, I.; Chen, L.; Goh, Y.-K.; Lawrie, K.; Chuang, Y.-M.;   Piscani, E.; Zimmerman, P. A.; Whittaker, A. K., Proc. SPIE 2009,   7273, 72733X.

  DOI: 10.1117/12.814076


  Initial studies are presented on the use of polysulfones as   non-chemically amplified resists (non-CARs) for 193 nm immersion   lithography. Polynorbornene sulfone films on silicon wafers have   been irradiated with 193 nm photons in the absence of a   photo-acid generator. Chemical contrast curves and contrast   curves were obtained via spectroscopic ellipsometry and grazing   angle - attenuated total reflectance FTIR spectroscopy. Results   were consistent with previously reported mechanisms for the   degradation of aliphatic polysulfones with ionizing radiation. It   was shown that E0 values could be reduced significantly by using   a post exposure bake step, which propagated depolymerization of   the polymer. Initial patterning results down to 50 nm half pitch   were demonstrated with EUV photons.

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