Publication Details (including relevant citation information):
Blakey, I.; Chen, L.; Goh, Y.-K.; Lawrie, K.; Chuang, Y.-M.; Piscani, E.; Zimmerman, P. A.; Whittaker, A. K., Proc. SPIE 2009, 7273, 72733X.
Initial studies are presented on the use of polysulfones as non-chemically amplified resists (non-CARs) for 193 nm immersion lithography. Polynorbornene sulfone films on silicon wafers have been irradiated with 193 nm photons in the absence of a photo-acid generator. Chemical contrast curves and contrast curves were obtained via spectroscopic ellipsometry and grazing angle - attenuated total reflectance FTIR spectroscopy. Results were consistent with previously reported mechanisms for the degradation of aliphatic polysulfones with ionizing radiation. It was shown that E0 values could be reduced significantly by using a post exposure bake step, which propagated depolymerization of the polymer. Initial patterning results down to 50 nm half pitch were demonstrated with EUV photons.
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