Idriss Blakey - Chain scission resists for extreme ultraviolet lithography based on high performance polysulfone-containing polymers.

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      Publication Details (including relevant citation   information):

      Lawrie, K. J.; Blakey, I.; Blinco, J. P.; Cheng, H. H.; Gronheid,   R.; Jack, K. S.; Pollentier, I.; Leeson, M. J.; Younkin, T. R.;   Whittaker, A. K., J. Mater. Chem. 2011, 21, 5629-5637.

      DOI: 10.1039/C0JM03288C


      A series of polymers with a comb architecture were prepared where   the  poly(olefin sulfone) backbone was designed to be highly   sensitive to  extreme ultraviolet (EUV) radiation, while the   well-defined poly(methyl  methacrylate) (PMMA) arms were   incorporated with the aim of increasing  structural   stability. It is hypothesized that upon EUV radiation rapid    degradation of the polysulfone backbone will occur leaving behind   the  well-defined PMMA arms. The synthesized polymers were   characterised and  have had their performance as   chain-scission EUV photoresists evaluated.  It was found   that all materials possess high sensitivity towards    degradation by EUV radiation   (E0 in the range 4–6 mJ   cm−2).  Selective degradation of   the poly(1-pentene sulfone) backbone relative  to the PMMA   arms was demonstrated by mass spectrometry headspace    analysis during EUV irradiation and by grazing-angle ATR-FTIR.   EUV  interference patterning has shown that materials are   capable of  resolving 30 nm 1 : 1   line : space    features. The incorporation of PMMA was found to increase   the  structural integrity of the patterned features. Thus,   it has been shown  that terpolymer materials possessing a   highly sensitive poly(olefin  sulfone) backbone and PMMA   arms are able to provide a tuneable materials  platform for   chain scission EUV resists. These materials have the    potential to benefit applications that require nanopattering,   such as  computer chip manufacture and nano-MEMS.

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