Li Shanying - Synthesis and nano-field-effect transistors of p-type Zn0.3Cd0.7Te nanoribbons

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  Publication Details (including relevant citation   information):

  Materials   Letters.   (2011) 65, 12, 1753-1755


  Ternarysemiconductor Zn0.3Cd0.7Te nanoribbons are, firstly,   synthesized via a two-step process, and the structure   characterizations reveal that the as-synthesized nanoribbons are   single-crystalline with a zinc blende structure and a crystal   growth direction of [1-10]. Nano-field-effect transistors are   fabricated based on single nanoribbon, and the electron transport   characteristics demonstrate that the Zn0.3Cd0.7Te ribbons have   p-type conductivity with a mobility ([mu]h) of 5.7 cm2V-1S-1 and   carrier concentration (nh) about 1.1 × 1017 cm-3. The prepared   nanoribbons with significant p-type conductivity will be a very   attractive candidate for nanoelectronic devices.

  Address (URL): 0&_coverDate=06%2F30%2F2011&_rdoc=1&_fmt=high&_orig=gateway&_origin=gateway&_so r t=d&_docanchor=&view=c&_searchStrId=1723867366& t =C000050221&_version=1&_urlVersion=0&_userid=10&md5=edd0e133b88313abd1b1ed24fcd f e9d3&searchtype=a