Publication Details (including relevant citation information):
Materials Letters. (2011) 65, 12, 1753-1755
Ternarysemiconductor Zn0.3Cd0.7Te nanoribbons are, firstly, synthesized via a two-step process, and the structure characterizations reveal that the as-synthesized nanoribbons are single-crystalline with a zinc blende structure and a crystal growth direction of [1-10]. Nano-field-effect transistors are fabricated based on single nanoribbon, and the electron transport characteristics demonstrate that the Zn0.3Cd0.7Te ribbons have p-type conductivity with a mobility ([mu]h) of 5.7 cm2V-1S-1 and carrier concentration (nh) about 1.1 × 1017 cm-3. The prepared nanoribbons with significant p-type conductivity will be a very attractive candidate for nanoelectronic devices.
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