Publication Details (including relevant citation information):
Micro & Nano Letters, (2011) 6, 6, 459-462
The atmosphere compensating technique with an individual selenium source is, firstly, used in the growth of phosphorus-doped p-type ZnSe nanowires. The morphology and structure characterizations reveal that the as-synthesized ZnSe nanowires has a wurtzite structure with a diameter of about 160 nm, a growth direction of . The electrical properties’ characterizations demonstrate that the selenium atmosphere compensation technique assisted with phosphorus-doping leads to a substantial action in p-type conductivity of ZnSe nanowires with a high mobility of 1.25 cm2V-1S-1 and carrier concentration of 1.47 × 1018 cm-3. The photoluminescence measurements show a dominant emission and two donor-acceptor pair emission.