Li Shanying - Enhanced p-Type Conductivity of ZnTe Nanoribbons by Nitrogen Doping,

Version 1

      Publication Details (including relevant citation   information):

      The   Journal of Physical Chemistry C.   (2010) 114,17, 7980-7985


      Single crystalline intrinsic and   N-doped p-ZnTe nanoribbons (NRs) were synthesized via the thermal   evaporation method in argon mixed hydrogen and nitrogen mixed ammonia, respectively.   Both intrinsic and   doped ZnTe nanoribbons   had zinc blende structure and uniform geometry. X-ray   diffraction peaks of   N-doped ZnTe nanoribbons had an   obvious shift toward higher angle direction as compared with intrinsic   ZnTe. X-ray photoelectron   spectroscopy detection confirmed that the dopant content of  nitrogen in ZnTe nanoribbons was   close to 1%. Field-effect transistors based on  both intrinsic and N-doped ZnTe nanoribbons   were constructed. Electrical measurements demonstrated that N-doping led to a   substantial enhancement in p-type conductivity of ZnTe   nanoribbons with a high hole mobility of 1.2 cm2 V-1S-1 and low   resistivity of 0.14 Wcm,   in contrast to the 6.2 × 10-3 cm2 V-1S-1 and 45.1  Wcm for intrinsic nanoribbons. Moreover,   the defect   reaction mechanism  was proposed to explain the p-type behaviors of  both the intrinsic and N-doped ZnTe   nanoribbons. P-type ZnTe   nanoribbons with enhanced   p-type conductivity may   have important  applications in   nano-electronic and optoelectronic  devices

      Address (URL):