Li Shanying - Structure and electrical properties of p-type twin ZnTe nanowires

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      Publication Details (including relevant citation   information):

      Applied   Physics A: Materials Science &   Processing.   (2011) 102, 2, 469-475


    1. Resonant tunneling is firstly found in twin p-type ZnTe   nanowire field-effect transistors. The twin ZnTe nanowries are   synthesized via thermal evaporation process. X-ray diffraction   and high-resolution transmission electron microscopy   characterization indicate that the as-grown twin nanowire has a   zinc-blende crystal structure with an integrated growth direction   of [11-1]. The twin plane is (11-1) and the angle between the   mirror symmetrical planes is 1410. The formation of   twins is attributed to the surface tension from the eutectic   liquid droplet. Field-effect transistors based on single ZnTe   twin nanowrie are constructed, the corresponding electrical   measurements demonstrate that the twin nanowries have a p-type   conductivity with a mobility (h) of 0.11   cm2V-1S-1, and a carrier   concentration (nh) of 1.1 × 10 17  cm-3. Significantly, the negative differential   resistance with a peak-to-valley current ratio of about 1.3 is   observed in p-type twin ZnTe nanowrie field-effect transistors at   room temperature. As the periodic barriers produced in the   periodic twin interfaces can form multi-barrier and multi-well   along one-dimensional direction. The multi-barrier can be   modulated under external electrical field. When the resonant   condition is met, the space charge will be enhanced with the   inherent feedback mechanism, and the resonant tunneling will   occur.  

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