Publication Details (including relevant citation information):
Applied Physics A: Materials Science & Processing. (2011) 102, 2, 469-475
- Resonant tunneling is firstly found in twin p-type ZnTe nanowire field-effect transistors. The twin ZnTe nanowries are synthesized via thermal evaporation process. X-ray diffraction and high-resolution transmission electron microscopy characterization indicate that the as-grown twin nanowire has a zinc-blende crystal structure with an integrated growth direction of [11-1]. The twin plane is (11-1) and the angle between the mirror symmetrical planes is 1410. The formation of twins is attributed to the surface tension from the eutectic liquid droplet. Field-effect transistors based on single ZnTe twin nanowrie are constructed, the corresponding electrical measurements demonstrate that the twin nanowries have a p-type conductivity with a mobility (h) of 0.11 cm2V-1S-1, and a carrier concentration (nh) of 1.1 × 10 17 cm-3. Significantly, the negative differential resistance with a peak-to-valley current ratio of about 1.3 is observed in p-type twin ZnTe nanowrie field-effect transistors at room temperature. As the periodic barriers produced in the periodic twin interfaces can form multi-barrier and multi-well along one-dimensional direction. The multi-barrier can be modulated under external electrical field. When the resonant condition is met, the space charge will be enhanced with the inherent feedback mechanism, and the resonant tunneling will occur.
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