Arash Nikniazi - Photocurrent and Surface Recombination Mechanisms in the InxGa1-xN\GaN Different-sized Quantum Dot Solar Cells

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  Publication Details (including relevant citation   information):

  Turkish Journal of Physics, Volume 34, Issue 2


  Published   at 7 November, 2010



  We present a p-i-n structured solar cell with stacked layers of   In xGa1-x N Quantum Dots (QDs) with different indium composition.   The photocurrent and surface recombination processes are   investigated in the i-region. We have shown that the QDs in the   i-region can play the role of both generation or recombination   centers. The photocurrent has been calculated by self-consistent   method to solve continuity equation of charge carriers in the   layers of the i-region. By changing the Indium composition in Inx   Ga1-x N QDs, the band gap of QDs varies and therefore provides a   considerable overlapping with solar spectrum. Proposed SC with   different-sized QDs and different Indium composition leads to   absorption of a desirable wavelength range of solar spectrum and   therefore a "rainbow" solar cell can be designed.

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