Mariana Fraga - Preliminary evaluation of the influence of the temperature on the performance of a piezoresistive pressure sensor based on a-SiC film

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      Publication Details (including relevant citation   information):

        FRAGA, M. A.MASSI, M. ; FURLAN, H. ; OLIVEIRA, I. C. ; RASIA,   L. A. ; MATEUS,   C. F. R. .   Preliminary evaluation of the influence of the temperature on the   performance of a piezoresistive pressure sensor based on a-SiC   film. Microsystem Technologies,   p. 477-480, 2011.

      Abstract:

        In order to evaluate the potential of amorphous silicon carbide   (a-SiC) films for piezoresistive sensors applications, a pressure   sensor has been developed based on this material. The deposition   conditions and properties of a-SiC films deposited on thermally   oxidized (100) Si substrates by two techniques enhanced by   plasma, PECVD (plasma enhanced chemical vapor deposition) and RF   magnetron sputtering, are briefly described and compared. Among   the SiC films produced, we choose the nitrogen-doped PECVD SiC   film to fabricate the piezoresistors of the sensor. The structure   of the sensor consists of six a-SiC piezoresistors, configured in   Wheatstone bridge, on a SiO2/Si   square diaphragm. The sensor was tested for applied pressure   ranging from 0 to 12 psi and supply voltage of 12 V. A   preliminary study of the influence of the temperature on the   performance of the sensor was performed by experimental   measurements and theoretical investigations.

      Address (URL): http://link.springer.com/article/10.1007%2Fs00542-011-1244-8