Mariana Fraga - SixCy thin films deposited at low temperature by DC dual magnetron sputtering: Effect of power supplied to Si and C cathode targets on film physicochemical properties

Version 1

      Publication Details (including relevant citation   information):

        H. S. Medeiros, R. S. Pessoa, J. C. Sagás, M. A. Fraga, L. V.   Santos, H. S. Maciel, M. Massi, A.S. da Silva Sobrinho,   "SixCy Thin   Films Deposited at Low Temperature by DC Dual Magnetron   Sputtering: Effect of Power Supplied to Si and C Cathode Targets   on Film Physicochemical Properties", Materials Science Forum,   Vols. 717-720, pp. 197-201, 2012

      Abstract:

        A DC dual magnetron sputtering system with graphite (C) and   silicon (Si) targets was used to grow stoichiometric and   non-stoichiometric silicon carbide (SixCy) thin films at low   temperature. Two independently DC power sources were used to   enable the total discharge power be shared, under certain   proportions, between the Si and C magnetron cathodes. The   motivation was to control the sputtering rate of each target so   as to vary the stoichiometric ratio x/y of the deposited films.   The species content, thickness and chemical bonds of as-deposited   SixCy films were studied by Rutherford backscattering   spectroscopy (RBS), profilometry analysis and Fourier transform   infrared absorption (FTIR), respectively. Overall, the present   work reveals a new reliable plasma sputtering technique for low   temperature growth of amorphous SixCy thin films with the   capability of tuning the degree of formation of a-SiC, a-Si and   a-C bonds in the film bulk.

      Address (URL): http://www.scientific.net/MSF.717-720.197