Hubert Valencia - Chemical beam epitaxy of GaAs1-xNx using MMHy and DMHy precursors, modeled by ab initio study of GaAs(100) surfaces stability over As2, H2 and N2

Document created by Hubert Valencia on Jan 10, 2017Last modified by Hubert Valencia on Sep 27, 2017
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  Hubert Valencia, Yoshihiro Kangawa, and Koichi Kakimoto, J.   Cryst. Growth 468, pp. 557-561 (2017).


  Using ab initio calculations, a simple model for   GaAs1-xNx vapor-phase   epitaxy on (100) surface of GaAs was created. By studying   As2 and H2 molecules adsorptions and As/N   atom substitutions on (100) GaAs surfaces, we obtain a relative   stability diagram of all stable surfaces under varying   As2, H2, and N2 conditions. We   previously proved that this model could describe the vapor-phase   epitaxy of GaAs1-x Nx  with simple, fully decomposed, precursors. In this paper, we show   that in more complex reaction conditions using   monomethylhydrazine (MMHy), and dimethylhydrazine (DMHy), it is   still possible to use our model to obtain an accurate description   of the temperature and pressure stability domains for each   surfaces, linked to chemical beam epitaxy (CBE) growth   conditions. Moreover, the different N-incorporation regimes   observed experimentally at different temperature can be explain   and predict by our model. The use of MMHy and DMHy precursors can   also be rationalized. Our model should then help to better   understand the conditions needed to obtain an high quality   GaAs1-xNx using   vapor-phase epitaxy.

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