K W Hipps - Fabrication of Graphene with CuO Islands by Chemical Vapor Deposition

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      Publication Details (including relevant citation   information):

      Qi, Yun, Eskelsen, Jeremy R., Mazur, Ursula, Hipps, K. W.   Langmuir 2012 28 (7) 3489-3493

      Abstract: Graphene prepared on Cu foil by   chemical vapor deposition was studied as a function of post   growth cooling conditions. CuO islands embedded in the graphene   film were discovered and studied by scanning electron microscopy,   atomic force microscopy, and X-ray photoemission spectroscopy. It   is shown that nanostructured holes can be formed within a   graphene film by reduction using hydrogen cooling immediately   after film growth. We also observe the formation of symmetrical   oxide islands in these holes. This study provides an easy way to   fabricate a graphene + CuO composite, and the method may be   extended to other graphene based structures.

      Address (URL): http://dx.doi.org/10.1021/la2048163