K W Hipps - Preparation of Atomically Smooth Aluminum Films:  Characterization by Transmission Electron Microscopy and Atomic Force Microscopy

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      Publication Details (including relevant citation   information):

      Higo, M., Lu, X., Mazur, U., Hipps, K. W. Langmuir  1997 13 (23) 6176-6182

      Abstract: Atomically smooth aluminum films with   thicknesses of about 200 nm were prepared by vacuum evaporation   of Al on heated mica substrates at 250 and 350 °C.   Characterization of the films by transmission electron microscopy   and transmission electron diffraction showed that the films   consist of single crystals about 300 nm in diameter with the   (111) face. The crystals are oriented randomly along the [111]   direction perpendicular to the substrate. Atomic force microscopy   observation of the films gave the morphology and roughness of the   film surfaces. It was found that the faces of the crystals of the   films formed at 250 and 350 °C are atomically smooth and the   root-mean-square roughness of the film surfaces is about 0.6 nm   over an area of 1 μm2.

      Address (URL): http://dx.doi.org/10.1021/la9703959