Hubert Valencia - Ab initio model for GaAs1− x N x chemical beam epitaxy using GaAs(100) surface stability over As2, H2, and N2

Document created by Hubert Valencia on May 19, 2017Last modified by Hubert Valencia on May 19, 2017
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  Publication Details (including relevant citation   information):

  Hubert Valencia, Yoshihiro Kangawa, and Koichi Kakimoto,  Jpn. J. Appl. Phys. 56, p. 060306   (2017)


  A model for the chemical beam epitaxy (CBE) of GaAs1−  xNx was previously   constructed on the basis of first-principles calculations of   (100) surfaces of GaAs with As2 and H2  adsorptions and As/N substitution to simulate As2,   H2, and N2 mixed gas conditions. We   previously demonstrated that this model can be used to predict   the temperature and pressure dependences of the growth behavior   in metal–organic chemical vapor deposition (MOCVD). In this   paper, we show that little modification is needed to transpose   this model to CBE experiments. Our model allows us to predict   transition temperatures at which Arrhenius regimes of   N2 incorporation are changed. Additionally, an   explanation of the trend of resulting regimes is given, which is   based on the analysis of surface stability during growth at   different temperatures.

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