Envelope wave vector formalism for conduction band, optical transitions and electron teleportation driven by magnetic field in dilute GaAsN quantum well. F1000Physics: Condens. Matter

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    Description
    The Hamiltonian for two harmonic oscillators in the basic of angular momentum j=1/2 and magnetic quantum numbers mj=1/2,-1/2 is build. Proportion coefficient are expressed by means of Clebsh-Gordan coefficient. It is shown that formalism may be applicable at the explaining of deformation dependence of the fundamental band gap of dilute GaInNAs. It is shown that formalism allows to predict the magnetic Coulomb levels near anticrossing point which are created at the generation two conduction band (Deltac1 and Deltac3) in GaN/AlN quantum wells. It is found that the two solutions in the dispersion equation lead to a duality of conduction band with highly nonparabolic stage; to the possibility additional optical transitions; to the possibility of existing of the bound state at the research of transition of discrete spectrum into the continuous state. It is calculated the analytical expression of Landau quantization in dilute GaAsN and their wave vectors are found. It is shown that the consideration of dilute GaAsN is united with the research of 1D periodical crystal in the direction of perpendicular to the magnetic field. In the article the conduction bands of dilute GaAsN, in the case when m(2)=infinity are studied. For 0.1 % N with 0.2 eV localized N-impurity level with respect of edge conduction band and hybridization between extended states of semiconductor matrix and orbits of N atoms occurs at k=6*108 m-1 calculated from Brillouin zone center, need to apply of magnetic field of 15.4 T, in order to tune an electron into a given k state. Thus it is shown, that the formalism can be used in the magnetotunneling spectroscopy researches.