Symmetry theory of Condensed Matter Physics and Quantum Hall effect in intersubband transitions of bulk GaN

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In the article the Quantum Hall effects are shown to be related with intraband transitions of bulk GaN. In the framework of the effective mass theories the Schrödinger equation is solved which are shown to be connected with the symmetry group of D_{3h}^{1}. The exact solutions of the Schrödinger equations for MoS_2 materials as well as Quantum Hall effect of intersubband transitions of bulk GaN are found. For the honeycomb lattice of MoS_2 the Effective Hamiltonian of group-VI Dichalcogenides based on D_{3h} point symmetry group was found. Derivation of expressions of momentum matrix elements of intersubband phototransitions for bulk GaN are considered. In the article for Quantum Hall effect of intersubband phototransitions of bulk GaN the expressions of Berry curvature as well as Hall conductivities have been found.

 

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