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Document created by Liubov Lokot on Jan 22, 2019
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Quantum Spin Hall effects are shown to be related with intraband transitions of bulk GaN. In the framework of the effective mass theories we have solved the Schrödinger equation if the topological insulator transformation is achieved. In the article the Schrödinger equation are shown to be connected with the symmetry point group of C_{6v}. The exact solutions of the Schrödinger equations as well as Quantum Spin Hall effect of intersubband transitions of bulk GaN are found. For the hexagonal symmetry of GaN the Effective Hamiltonian based on C_{6v} point symmetry group was found. Derivation of expressions of momentum matrix elements of the both intersubband phototransitions as well as interband phototransitions for bulk GaN are considered. In the article for Quantum Hall effect of intersubband phototransitions of bulk GaN the expressions of Berry curvature as well as Hall conductivities have been found when the topological insulator transformation is achieved.