Mariana Fraga - The Influence of AlN Intermediate Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering

Document created by Mariana Fraga on Mar 24, 2019
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  Galvão,   N.; Guerino, M.; Campos, T.; Grigorov, K.; Fraga, M.; Rodrigues,   B.; Pessoa, R.; Camus, J.; Djouadi, M.; Maciel, H. The Influence   of AlN Intermediate Layer on the Structural and Chemical   Properties of SiC Thin Films Produced by High-Power Impulse   Magnetron Sputtering. Micromachines 201910,   202.


    Many strategies have been developed for the synthesis of silicon   carbide (SiC) thin films on silicon (Si) substrates by   plasma-based deposition techniques, especially plasma enhanced   chemical vapor deposition (PECVD) and magnetron sputtering, due   to the importance of these materials for microelectronics and   related fields. A drawback is the large lattice mismatch between   SiC and Si. The insertion of an aluminum nitride (AlN)   intermediate layer between them has been shown useful to overcome   this problem. Herein, the high-power impulse magnetron sputtering   (HiPIMS) technique was used to grow SiC thin films on AlN/Si   substrates. Furthermore, SiC films were also grown on Si   substrates. A comparison of the structural and chemical   properties of SiC thin films grown on the two types of substrate   allowed us to evaluate the influence of the AlN layer on such   properties. The chemical composition and stoichiometry of the   samples were investigated by Rutherford backscattering   spectrometry (RBS) and Raman spectroscopy, while the   crystallinity was characterized by grazing incidence X-ray   diffraction (GIXRD). Our set of results evidenced the versatility   of the HiPIMS technique to produce polycrystalline SiC thin films   at near-room temperature by only varying the discharge power. In   addition, this study opens up a feasible route for the deposition   of crystalline SiC films with good structural quality using an   AlN intermediate layer.

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