Quantum Cryptography

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Spin Hall insulators have connected with respect to dissipationless spin transport via a sample with the spin-orbit interactions (SOI) effects. The extremum rings of the valence band in tensile strained zincblende GaN quantum well as well as the two valley shape of the valence band in GaN nanotube grown along c axis were a collection have attracted our attention both for their fundamental studies and for their device applications. The Quantum Spin Hall effects are shown to be related with intraband transitions of bulk GaN. In the framework of the effective mass theories we have solved the Schrödinger equation if the topological insulator transformation is achieved. The exact solutions of the Schrödinger equations as well as Quantum Spin Hall effect of intraband transitions of bulk GaN are found. For the hexagonal symmetry of GaN the Effective Hamiltonian based on C_{6v} point symmetry group was found. In the article for Quantum Hall effect of intraband phototransitions of bulk GaN the expressions of Berry curvature as well as Hall conductivities have been found when the topological insulator transformation is achieved. Spin Hall insulators have connected with the Topological insulator (TI) as well as Exciton insulators. The dissipationless spin transport via the sample are shown to be related with Spin Hall insulator self-consistent solution of the Schrödinger equations for electrons and holes and the Poisson equations at the presence of spatially varying quantum well potential due to the piezoelectric effect and the local exchange-correlation potential in ZnO quantum well. In ZnO/(Zn,Mg)O quantum well the electron-hole pairing leads to the exciton insulator states. An exciton insulator states with a gap 3.4 eV of ZnO quantum well and at 310 K temperature are predicted. If the electron and hole are separated, their energy is higher on 0.2 meV than if they are paired. The particle-hole pairing leads to the Cooper instability.