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Photo posted by Liubov Lokot on Jul 23, 2019

Book: Quantum Cryptography, 2019
Author: Liubov E Lokot
Publication database: https://communities.acs.org/people/LiubovLokot/content
Facebook: https://www.facebook.com/Lyubov-E-Lokot-568527586648973;

Abstract I: Spin Hall insulators have connected with respect to dissipationless spin transport via a sample with the spin-orbit interactions (SOI) effects. The extremum rings of the valence band in tensile strained zincblende GaN quantum well as well as the two valley shape of the valence band in GaN nanotube grown along c axis were a collection have attracted our attention both for their fundamental studies and for their device applications. The Quantum Spin Hall effects are shown to be related with intraband transitions of bulk GaN. In the framework of the effective mass theories we have solved the Schrödinger equation if the topological insulator transformation is achieved. The exact solutions of the Schrödinger equations as well as Quantum Spin Hall effect of intraband transitions of bulk GaN are found. For the hexagonal symmetry of GaN the Effective Hamiltonian based on C_{6v} point symmetry group was found. In the article for Quantum Hall effect of intraband phototransitions of bulk GaN the expressions of Berry curvature as well as Hall conductivities have been found when the topological insulator transformation is achieved. Spin Hall insulators have connected with the Topological insulator (TI) as well as Exciton insulators. The dissipationless spin transport via the sample are shown to be related with Spin Hall insulator self-consistent solution of the Schrödinger equations for electrons and holes and the Poisson equations at the presence of spatially varying quantum well potential due to the piezoelectric effect and the local exchange-correlation potential in ZnO quantum well. In ZnO/(Zn,Mg)O quantum well the electron-hole pairing leads to the exciton insulator states. An exciton insulator states with a gap 3.4 eV of ZnO quantum well and at 310 K temperature are predicted. If the electron and hole are separated, their energy is higher on 0.2 meV than if they are paired. The particle-hole pairing leads to the Cooper instability.

Abstract II: The Fractional Quantum Spin Hall effects are shown to be related with a significant red-shift of the exciton peak with increasing electron-hole gas density for quantum well with a complex shape of valence bands spectrum as well as with intraband transitions of bulk GaN. Physically it indicates the annihilation of charge neutrality of an exciton. Electron and photon teleportation in quantum spectroscopy researches associates with the Schrödinger cat states as well as with a significant red-shift of the exciton peak in materials with complex dispersion. The energy of the exciton resonance for the wurtzite quantum well is found. The obtained results can be explained by an influence of the valence band structure on quantum confined effects. The optical gain spectrum in Hartree-Fock approximation is calculated. The red shift of the gain spectra in Hartree-Fock approximation with respect to Hartree gain spectra is calculated. The entanglements of valence bands one can lead into electron teleportation, quantum cryptography and artificial intelligence researches. Sommerfeld enhancement is calculated. Schrödinger cat states can enhance laser light in laser-spectroscopic techniques. It indicates a possibility control and characterize excitons as well as electron-hole complexes. It testify about a possibility control and characterize of charge fractionize. Although the topological insulator (TI) state can be achieved in semiconductors with inverted bands and in usually driven by the intrinsic spin-orbit interactions SOI arising from heavy host atoms a significant fractional quantum spin Hall effect in complex GaN quantum wells are shown to be related with electron-hole subsystem with revolutionized characterization of laser technologies.

Publication: American Chemical Society Number 31349612; Network: https://communities.acs.org/people/LiubovLokot/content
ResearchGate Press: https://www.researchgate.net/profile/Liubov_Lokot;

ScholarGoogle Number ID cVaDnW4AAAAJ
American Physical Society Member ID 61269575
ORCID http://orcid.org/0000-0001-9510-5355
Accreditation: 25 July-02 Sep. 2003-Proceedings of the Abdus Salam International Centre for Theoretical Physics in connection with the Third Stig Lundqvist Conference on Advancing Frontiers of Condensed Matter Physics: Fundamental Interactions and Excitations in Confined Systems, (11-15 August 2003).
20 May-28 Jun 2004-Proceedings of the Abdus Salam International Centre for Theoretical Physics in connection with the Conference of Condensed Matter Physics, (20 May 2004-28 June 2004).
Article: Excitonic spectra bleaching and Fractional Quantum Spin Hall Effects without Landau levels;
Author: Liubov E Lokot
Memory: Although the extremum loop or ring of the valence band effects in wurtzite crystals were studied ~\cite{{Casella:1960jd},{Rashba:1960jd},{Mahan:1964jd},{Voon:1996jd},{Rashba:20 04jd},{Rashba:2012jd},{Miao:2012jd},{Maslov:2005jd},{Engel:2007qr},{Banal:2009jd }}, the both the suppressing of laser effect and Spin Hall effects in bulk GaN as well as in GaN/AlGaN Quantum wells were not found in publications Phys. Rev. B 53 (1997), 1996; Phys. Rev. B 55 (4360), 1997; Solid State Commun. 106 (127), 1998; Phys. Rev. B 80 (115320), 2009; Phys. Rev. B 85 (035318), 2012, of 1996, 1997 New Years Eve. It should be noted that in 1998 the Science discovery of Quantum Fractional Hall Effects in Quantum Matter was Nobel Prize winner by Kingdom Academy of Sciences of Sweden.

Article: Fractional Quantum Spin Hall Effects specified by Excitonic and Topological Insulator Transitions in Graphene and ZnO/Zn(Mg)O Quantum Wells without Landau levels
Author: Liubov E Lokot
Abstract: In the article the Quantum Spin Hall effects are shown to be related with intraband transitions of bulk GaN. We have presented the microscopic many-body theory which based on the semiconductor Bloch equations that are Heisenberg equations for optical polarizations and carriers populations related with the variation methods for founding the grounds states of graphene in the optical responses of these materials on laser excitations. In the framework of the effective mass theories the Schrödinger equation is solved which are shown to be connected with the symmetry group of D_{3h}^{1}. The exact solutions of the Schrödinger equations for MoS_{2} materials as well as Quantum Spin Hall effect of intersubband transitions of bulk GaN are found. For the honeycomb lattice of Graphene and MoS_{2} the Effective Hamiltonian of group-VI Dichalcogenides based on D_{3h} point symmetry group was found. Derivation of expressions of momentum matrix elements of intersubband phototransitions for bulk GaN are considered. In the article for Quantum Spin Hall effect of intersubband phototransitions of bulk GaN the expressions of Berry curvature as well as Hall conductivities have been found. I think in the article ~\cite{Stroucken:2011jd} the derived of Optical Response and Ground States of Graphene by T. Stroucken, J.H. Grönqvist and S.W. Koch were not allowed and consequently were not found by means of the uncertain inference of just these similar symmetrical expressions into \eqref{deq121imag&}, \eqref{deq122imag&}.

Keywords: Graphene, Fractional Quantum Spin Hall Effect, Solid State Physics, Optics and Lasers, Quantum Informations, Schrödinger Equations, Schrödinger cat states, Dirac Equations, Quantum Cryptography, Spin Hall Effects, Quantum Spin Hall Effects, Green Chemistry, Nitride light, Nitride materials, GaN quantum wells, ZnO quantum wells, Blue-green lasers, Berry curvature, Hall conductivity, Cooper instability, Exciton insulators, Topological insulators.

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