Photocurrent and Surface Recombination Mechanisms  in the InxGa1−xN/GaN Different-sized Quantum Dot  Solar Cells

Document created by Arash Nikniazi on May 8, 2012
Version 1Show Document
  • View in full screen mode

We present a p-i-n structured solar cell with stacked layers of InxGa1−x N Quantum Dots (QDs) with

different indium composition. The photocurrent and surface recombination processes are investigated in the

i-region. We have shown that the QDs in the i-region can play the role of both generation or recombination

centers. The photocurrent has been calculated by self-consistent method to solve continuity equation of

charge carriers in the layers of the i-region. By changing the Indium composition in Inx Ga1−xN QDs, the

band gap of QDs varies and therefore provides a considerable overlapping with solar spectrum. Proposed

SC with different-sized QDs and different Indium composition leads to absorption of a desirable wavelength

range of solar spectrum and therefore a “rainbow” solar cell can be designed.